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研究进展在液相增长的GaN晶体的研究进展

Defu Sun¹, Lei Liu¹, Guodong Wang¹

¹Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, Shandong, 250100, P. R. China.

Chemistry (Weinheim an der Bergstrasse, Germany)

|December 23, 2023

概括

液相生长方法,如流体和氨热方法,为更高质量的化 (GaN) 晶体提供了途径. 这些技术解决了先进电子设备的基板尺寸和质量的局限性.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理

背景情况:

化 (GaN) 是一种宽带间隙半导体,具有优异的性能,适用于高频,高功率和高温应用.
目前,基于GaN的电子设备的性能受到缺乏高质量,大尺寸的GaN晶体基板的限制.

研究的目的:

审查和比较液相生长方法,以生产高质量的GaN晶体.
概述GaN液相增长的原理,特征和发展趋势.

主要方法:

对GaN晶体生长的流量方法的审查.
对GaN晶体生长的氨热方法的审查.

主要成果:

液相生长方法,特别是流体和氨热,显示出克服基质限制的潜力.
溶剂和矿化剂的选择显著影响了GaN晶体质量和设备性能.

结论:

液相生长为高级GaN晶体生产提供了蒸汽相方法的可行替代方案.
在液相增长方面进行进一步的研究和技术改进对于先进的GaN设备的商业应用至关重要.

关键词:

在 GaN 晶体中.氨热生长方法的使用.流量增长方法流量增长方法

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