热发光研究对质子辐射的Cr,Mg-编码β-Ga2O3进行研究
Duarte Magalhães Esteves1,2, Ana Luísa Rodrigues3,4, Maria Isabel Dias3,4
1INESC MN, Rua Alves Redol 9, Lisboa 1000-029, Portugal.
ACS omega
|December 25, 2023
概括
质子辐射增强了添加氧化的热发光,揭示了关键的缺陷陷. 这些陷对于光学传感器和剂量测量至关重要,在辐射后保持稳定,并且可以恢复.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 发光的光度是非常的低.
背景情况:
- 用添加的氧化物 (Ga2O3) 对光学传感器呈现出有前途的红红外线光辐射.
- 了解缺陷特性对于优化半导体性能至关重要.
研究的目的:
- 综合研究Cr,Mg编码β-Ga2O3单晶体的热发光 (TL) 特性.
- 调查质子辐射对TL行为和缺陷陷的影响.
- 评估剂量计中的潜在应用.
主要方法:
- 在质子辐射前后对β-Ga2O3晶体进行热发光测量.
- 使用不同辐射剂量,预热步骤 (T_M-T_STOP,初始上升) 和计算拟合的分析.
- 通过激活能量的确定来进行缺陷陷的表征.
主要成果:
- 确定了至少三个具有0.84,1.0和1.1 eV激活能的电子陷,可能与缺陷复合有关.
- 质子辐射增强了热发光信号,但没有改变陷的特性.
- 在923 K的辐射样品10秒内火后,恢复了原来的光曲线.
结论:
- 质子辐射可以增强Cr,Mg编码β-Ga2O3中的TL信号,这表明辐射剂量计的潜力.
- 发现的缺陷陷与Cr3+排放有关,这对于光学传感应用至关重要.
- 退火有效地恢复了材料的原始状态,表明材料的稳定性和可重复使用性.
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