在曲的半导体薄膜中巨大的柔电
Ya-Xun Wang1,2, Jian-Gao Li1,2, Gotthard Seifert3
1College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, P.R. China.
Nano letters
|December 26, 2023
概括
我们在高应力下发现了和等半导体中的一个新的柔电效应. 这种由频段差距缩小带来的效应导致显著的两极分化,并有可能产生新的电子应用.
科学领域:
- 固态物理 固态物理
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 半导体中的柔电性并未得到充分理解,尤其是在高应变梯度下.
- 现有的模型不能完全解释曲半导体薄膜中观察到的现象.
研究的目的:
- 为了阐明半导体在高应变梯度下柔性电的机制.
- 研究应变梯度诱导的带隙变化对半导体柔性电力的作用.
主要方法:
- 利用Bloch定理来模拟半导体的行为.
- 在曲条件下分析了 (Si) 和 (Ge) 的薄膜.
主要成果:
- 在曲的Si和Ge薄膜中发现了强烈的柔电效应,这是由于高应变梯度引起的带间隙闭合.
- 观察到压缩和延长膜区域之间异常的II型带对齐.
- 证明了从压缩到延长边的电子转移,在薄膜厚度上引起了显著的极化变化.
- 报告了意想不到的高横向柔电系数,与薄膜厚度的二次依赖.
结论:
- 这项研究揭示了半导体中柔性电的新型机制,该机制是由应变梯度诱导的带隙关闭驱动的.
- 该机制适用于其他具有中等能量差距的半导体材料.
- 这些发现对开发基于半导体的新型柔性电器具有重大意义.
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