相关实验视频

Updated: Jun 25, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
08:49

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films

Published on: December 4, 2014

14.3K

高度定向 (VNbMoTaW) S2层的增长

Koichi Tanaka1, Hicham Zaid1, Toshihiro Aoki2

  • 1Department of Materials Science and Engineering, University of California, Los Angeles, 410 Westwood Plaza, Los Angeles, California 90095, United States.

Nano letters
|December 26, 2023
PubMed
概括

研究人员开发了一种新方法,可以直接沉积高合金过渡金属二甲基化物 (TMDC) 层. 这一进步使得在新型应用中可以精确控制TMDC材料的性能.

关键词:
具有高的高.高度定向的增长指导的增长.多元元素的多元元素喷雾沉积的喷雾沉积.过渡金属二二甲基化物

更多相关视频

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.5K

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...