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Updated: Jul 7, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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半导体PtSe2和金属PtTe2的可逆转换用于可扩展的全二维边缘接触FET

Sang Sub Han1, Shahid Sattar2, Dmitry Kireev3,4,5

  • 1NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States.

Nano letters
|December 27, 2023
PubMed
概括

研究人员使用二化 (PtSe2) 和二化 (PtTe2) 边缘接触器开发了厘米尺度的所有2D场效应晶体管 (FET) 阵列. 这种可扩展的方法提高了FET的性能,为先进的2D-TMD电路系统铺平了道路.

关键词:
2D PtSe2 层是一个二维层.2D PtTe2 层是一个二维层.2D TMD 异构结构 2D TMD 异构结构离子交换的离子交换化学过渡 化学过渡边缘接触接触 边缘接触

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