非侵入性脑刺激对精神分裂症相关认知障碍的认知功能的有效性和安全性:系统性审查和元分析
Xueyan Li1, Jie Dai1, Qingran Liu1
1Neurology Department, Cangzhou City Center Hospital, Cangzhou, 061000, China.
Journal of psychiatric research
|December 27, 2023
概括
非侵入性脑刺激 (NIBS) 没有改善精神分裂症患者的认知功能. 然而,重复性跨磁刺激 (rTMS) 和跨直流刺激 (tDCS) 对负面症状有好处,并且耐受良好.
科学领域:
- 神经科学是一个神经科学.
- 精神病学是一个精神病学.
背景情况:
- 精神分裂症与显著的认知障碍有关.
- 非侵入性脑刺激 (NIBS) 技术,如跨磁刺激 (TMS) 和跨直流刺激 (tDCS),正在探索治疗益处.
研究的目的:
- 进行元分析,调查精神分裂症患者中NIBS的认知改善和安全性.
- 评估NIBS对认知功能和负面症状的整体影响.
- 确定特定的NIBS参数和与有利结果相关的协议.
主要方法:
- 我们对PubMed,EMBASE,Cochrane图书馆和科学网进行了系统的搜索.
- 包含997名患者的20个双盲,随机化,假控试验 (RCT) 被纳入了元分析.
- 考克兰偏差风险工具评估了研究质量,审查经理被用于统计分析.
主要成果:
- 在NIBS治疗后,没有观察到认知功能的显著改善.
- 然而,NIBS,特别是重复性TMS (rTMS) 和tDCS,与虚假对照 (SMD = -0.56) 相比,在负面症状中显示出显著的改善.
- 对负面症状的有利影响与左背侧前额叶皮质在20 Hz的1个多月内与rTMS相关,耐受性良好.
结论:
- NIBS,特别是rTMS和tDCS,可以为精神分裂症的负面症状提供好处,具有良好的耐受性.
- 刺激类型,位置,强度和持续时间等特定参数会影响NIBS的有效性.
- 由于研究异质性和局限性,应谨慎解释结果.
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