结晶方向对Cu-Cu固态结合行为的影响,通过分子动力学模拟
Hiroaki Tatsumi1, C R Kao2, Hiroshi Nishikawa3
1Joining and Welding Research Institute, Osaka University, 11-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan. tatsumi.jwri@osaka-u.ac.jp.
Scientific reports
|December 28, 2023
概括
铜-铜固态结合是先进电子产品的关键. 这项研究表明,晶体的方向显著影响结合速度,由于谷物边界扩散,错位的晶体结合得更快.
科学领域:
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
- 计算材料科学科学 计算材料科学
背景情况:
- 高密度电子产品面临传统锡接接头的局限性.
- 铜-铜 (Cu-Cu) 固态粘合提供了一个有希望的替代方案,但需要优化方法.
- 了解Cu-Cu结合的基本机制对于过程改进至关重要.
研究的目的:
- 为了研究晶体方向对Cu-Cu固态结合的影响.
- 阐明Cu-Cu结合过程中的界面密集和扩散现象.
- 为优化制造业中的Cu-Cu粘合工艺提供见解.
主要方法:
- 利用分子动力学 (MD) 模拟来建模Cu-Cu固态结合.
- 采用单晶Cu板,简化周期性表面结构以模拟粗度.
- 通过平均平方位移 (MSD) 分析了界面密度,扩散系数和激活能量.
主要成果:
- 相同的晶体方向导致与错误的方向相比,界面密度较慢.
- 错误的方向显著加快了结合,这是由于谷物边界 (GB) 结构的形成.
- 误导性关节的计算扩散系数显著更大,GB扩散的激活能量较低.
结论:
- 晶体方向极大地影响了Cu-Cu固态结合的速度和机制.
- 谷物边界扩散在加速结合过程中起着关键作用.
- 这些发现为优化依赖粘合技术的制造工艺提供了有价值的启示.
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