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可逆电荷转移兴奋剂在原子薄的中₂O₃由Viologens提供

Sung-Tsun Wang^1,2, Yu-Liang Lin³, Lin-Ruei Lee³

¹Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

ACS applied materials & interfaces

|December 29, 2023

概括

维奥的兴奋剂调节了原子薄的氧化 (In2O3) 中的载体度,而无需回火. 这种可逆电荷转移方法在较薄的通道中提高了兴奋剂的效率,使下一代电子应用成为可能.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

原子薄的氧化物半导体对于3D集成和传感器至关重要.
控制这些材料中的载体度对于设备的性能至关重要.

研究的目的:

为呈现一个新的,无回火的原子薄氧化 (In2O3) 电荷转移兴奋剂方法.
为了研究通道厚度对使用viologen的兴奋剂效率的影响.
为了证明这种兴奋剂方法在电子设备中的应用.

主要方法:

使用viologen,一种具有高还原潜力的有机化合物,用于In2O3.3.的电荷转移兴奋剂.
研究了In2O3通道厚度对兴奋剂效率的影响.
制造和特征一个n型金属氧化物半导体逆变器使用viologen-doped In2O3.3.

主要成果:

在 2 nm In2O3 装置中达到 6.8 × 1012 cm-2 的电子板密度,而不会影响载体的移动性.
证明,由于表面与体积比较高,随着通道厚度的减少,兴奋剂的效率会增加.
通过轻松地用乙去除viologen,展示了一个可逆的兴奋剂过程.
在V<0xE1><0xB5><0x83>=5V时开发了一种使用viologen的In2O3逆变器,电压增益为26.

结论:

维奥伦的电荷转移兴奋剂提供了一种有效和可逆的方法来控制原子薄的In2O3.3.中的载体度.
该过程对通道厚度高度敏感,提供可调节的兴奋剂.
这种技术对开发先进的电子设备和下一代应用具有前景.

关键词:

在2O3中.原子薄的半导体半导体充电转移兴奋剂的使用门电压的门电压是什么维生素的生理学

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