从反向Rashba-Edelstein效应到反向Spin Hall效应的原子层控制过渡在2D PtSe2中被THz Spintronic发射探测到
Khasan Abdukayumov1, Martin Mičica2, Fatima Ibrahim1
1CEA, CNRS, Université Grenoble Alpes, Grenoble INP, IRIG-Spintec, Grenoble, 38000, France.
Advanced materials (Deerfield Beach, Fla.)
|December 30, 2023
概括
二维化 (PtSe2) 通过控制层厚度,表现出可调节的旋转到充电转换 (SCC). 这项研究揭示了在PtSe2中从反向Rashba-Edelstein效应到反向旋转霍尔效应的过渡,使THz旋转器件的开发成为可能.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 由于强大的旋转轨道合 (SOC) 和可调节的电子特性,二维 (2D) 材料为旋转到充电转换 (SCC) 提供了独特的平台.
- 过渡金属二甲基化物 (TMD) 对于自旋电子应用特别有前途.
研究的目的:
- 通过使用THz旋转辐射在表层生长的2D化物 (PtSe2) 中研究SCC.
- 探索PtSe2厚度对SCC机制和设备性能的影响.
主要方法:
- 高品质的2D PtSe2层的上轴生长.
- 在现场通过喷沉积铁磁铁,以创建干净的接口.
- 测试SCC的THz旋转式排放测量.
主要成果:
- 具有明确界面的高质量PtSe2层.
- 在SCC机制中观察到一个厚度依赖的过渡: 1-3个单层 (ML) 的逆拉什巴-埃德尔斯坦效应 (IREE) 和 >3ML的逆自旋霍尔效应 (ISHE).
- 量化垂直旋转扩散长度和IREE和ISHE的相对强度.
结论:
- PtSe2表现出可调节的SCC,随着层厚度的增加,从IREE过渡到ISHE.
- PtSe2的灵活带结构使其成为探索SCC机制的优秀候选者.
- PtSe2是开发可调 THz 旋转发射器的一个有前途的材料.
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