使用金属合金缓冲层战略合成等离子活性化
Arthur F Lipinski1, Christopher W Lambert1, Achyut Maity1
1School of Mathematics and Physics, Queen's University Belfast, Belfast BT7 1NN, U.K.
概括
化 (TiN) 薄膜为等离子体提供了一个有希望的替代品. 一个CrRu缓冲层使高质量的TiN能够在经济高效的基板上实现,实现出色的等离子体性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 光学是什么?光学是什么?光学是什么?
背景情况:
- 传统的等离子体材料面临着局限性.
- 化 (TiN) 是一种新兴的替代品,具有可调节的特性.
- 在各种基板上开发高质量的TiN薄膜对于先进的应用至关重要.
研究的目的:
- 研究使用- (CrRu) 缓冲层制造高质量的TiN薄膜.
- 为了评估TiN薄膜在无形基板上的等离子性能.
- 为了表征TiN薄膜和表面等离子体的纳米结构.
主要方法:
- 使用CrRu缓冲层在化上制造TiN薄膜.
- 薄膜质量和等离子体性能的表征.
- 使用减弱总反射率 (ATR) 和阴极发光 (CL) 光谱学.
主要成果:
- 获得了同类中最佳的TiN薄膜,其等离子体功率值 (-ε'/ε′′) 约为2.8.
- 在~300°C的温和温度下,在经济高效的化基板上证明了高薄膜质量.
- 描述了TiN三角形纳米结构,显示了表面等离子体的潜力.
结论:
- CrRu 缓冲层有助于高质量的 TiN 在无形基板上沉积.
- TiN薄膜表现出卓越的等离子性能,与传统材料相竞争.
- TiN纳米结构对未来的表面等离子体设备显示出希望.
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