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Updated: Jul 27, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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晶圆尺度单晶2D半导体过渡金属二甲基化物单层的增长

Jitendra Singh1,2, Nadiya Ayu Astarini1, Meng-Lin Tsai1

  • 1Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei City, 106335, Taiwan.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|January 2, 2024
PubMed
概括

大规模的单晶二维过渡金属二甲基化物 (TMD) 单层对于先进的纳米设备至关重要. 控制基质介导的表轴生长是最大限度地减少谷物边界和提高工业应用的单层质量的关键.

关键词:
两维材料是二维材料.化学蒸气沉积 化学蒸气沉积场效应晶体管 场效应晶体管一个单晶的水晶.过渡金属二甲基二甲基化物

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Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...