在Janus VSiGeZ4 (Z = N, P, As) 单层中调整电荷,自旋和谷的偏振特性
Ming-Yang Liu1, Guang-Qiang Li1, Yao He2
1Department of Physics and Electronic Science, Chuxiong Normal University, Chuxiong 675000, P. R. China. 18788549890@163.com.
斯VSiGeZ4单层表现出可调节的电荷,旋转和谷极化. 这些二维铁路道材料显示了先进的自旋电子和道电子设备的潜力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子力学就是量子力学.
背景情况:
- 极化是理解二维 (2D) 材料中对称性破坏的关键.
- 詹努斯2D铁路谷材料为研究合电荷,旋转和谷极化提供了独特的平台.
研究的目的:
- 系统地研究Janus VSiGeZ4 (Z = N,P,As) 单层的电荷,旋转和谷极化特性.
- 探索对称性破坏和外部刺激 (如双轴应变) 对这些极化特征的影响.
主要方法:
- 使用第一原理计算来研究极化特性.
- 分析了磁性特性和双轴应变的影响.
主要成果:
- 外平面电荷偏振被非零双极时刻和工作功能的差异证实.
- VSiGeN4具有高临界温度的2D-XY磁性;VSiGeP4和VSiGeAs4显示出平面外磁化.
- 预测了自发的山谷极化,并通过双轴应变证明了它的切换.
结论:
- 简氏VSiGeZ4单层具有内在的极化特性.
- 这些材料表现出可调节的旋转和谷极化,使它们成为旋转和谷极化应用的有希望的候选者.
更多相关视频
09:00Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
相关概念视频
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Dielectric Polarization in a Capacitor
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...
Trends in Lattice Energy: Ion Size and Charge
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the...
