相关实验视频

Updated: Jul 6, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K

用于增强表面非线性频率转换的角度工程策略,以中心对称的拓半金属HfGe0.92TeTe

Qiming Zhao1, Long Chen2,3, Fei Liang1,4

  • 1State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.

Advanced materials (Deerfield Beach, Fla.)
|January 2, 2024
PubMed
概括

中心对称的拓半金属HfGeTe表现出巨大的表面非线性易感性,使其能够高效的第二和生成 (SHG). 这一突破为集成光子应用提供了比提高10^4倍的效率.

关键词:
迪拉克点是迪拉克点.光学转换效率的效率是什么第二个和的第二代.表面非线性光学 表面非线性光学拓性的半金属.

更多相关视频

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys12:18

Co-localizing Kelvin Probe Force Microscopy with Other Microscopies and Spectroscopies: Selected Applications in Corrosion Characterization of Alloys

Published on: June 27, 2022

2.7K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.5K

相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259