HfO2-ZrO2 具有超格结构的铁电电容器:改善疲劳稳定性,疲劳恢复和切换速度
Mingshuang Kang1, Yue Peng1, Wenwu Xiao1,2
1School of Microelectronics, Xidian University, Xi'an 710071, China.
ACS applied materials & interfaces
|January 3, 2024
概括
氧化-氧化 (HfO2-ZrO2) 超晶格铁电薄膜比合金具有增强的性能. 这些超级网格为先进的存储器设备提供了改进的残余极化,稳定性和切换速度.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 氧化-氧化 (HfO2-ZrO2) 铁电膜对于现代集成电路至关重要.
- 这些材料在广泛的兴奋剂范围和低沉积温度下具有铁电性质.
- 目前正在探索超级网格 (SL) 结构以提高铁电性能.
研究的目的:
- 系统地研究具有不同周期性的HfO2-ZrO2超晶格铁电薄膜.
- 为了比较SL薄膜与HfZrO2 (HZO) 合金薄膜的铁电特性,稳定性和切换速度.
- 评估SL结构在高速铁电内存应用中的潜力.
主要方法:
- 制造和表征HfO2-ZrO2超晶格 (SL) 薄膜 (SL5,SL10,SL15) 和HfZrO2 (HZO) 合金薄膜.
- 测量铁电性质,包括残留极化 (Pr).
- 在各种状态下 (初始,唤醒,疲劳,恢复) 分析一级逆转曲线 (FORC) 图.
- 应用不均场机制 (IFM) 模型来评估切换速度.
主要成果:
- 与HZO膜 (41.4μC/cm2) 相比,SL5膜在3V/10kHz时呈现出更好的残余极化 (48.6μC/cm2),而HZO膜 (41.4μC/cm2) 在3V/10kHz时呈现出更好的残余极化.
- SL电容器通过在P-V循环过程中抑制缺陷扩散,证明了卓越的疲劳稳定性和恢复能力.
- 与HZO电容器相比,SL膜显示了增强的开关速度,正如IFM模型所预测的那样.
结论:
- 与HZO合金相比,HfO2-ZrO2超级晶格结构显著提高了铁电特性.
- SL结构有效地减轻了缺陷扩散,从而提高了耐力和可靠性.
- 这些发现凸显了HfO2-ZrO2超级格子在下一代高速铁电内存应用中的巨大潜力.
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