抗铁磁介层交换合 Co68B32/Ir/Pt 多层交换
Emily Darwin1,2, Riccardo Tomasello2, Philippa M Shepley1
1School of Physics and Astronomy, University of Leeds, Leeds, LS2 9JT, UK.
Scientific reports
|January 3, 2024
概括
合成反铁磁铁提供高速和成像优势. 研究人员设计了两个系统,发现其中一个抑制了 skyrmion Hall 角度,并实现了高级内存设备的五倍以上的 skyrmion 速度.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
背景情况:
- 合成反铁磁 (SAF) 结构将反铁磁的高速动态与铁磁体的实验性可访问性相结合.
- 对于下一代数据存储,逻辑设备和赛道记忆来说,SAF材料非常有前途.
研究的目的:
- 探索SAF在设备应用中的潜力和局限性.
- 设计和研究两个不同的SAF系统,以了解它们对数据存储和内存技术的特性.
主要方法:
- 两个SAF系统的制造和表征: (1) 具有反铁磁合的CoB/Ir/Pt多层和 (2) 具有反铁磁相互作用的合铁磁多层.
- 歇斯底里测量以分析磁合稳定性.
- 克尔成像用于观察切换行为.
- 温度依赖研究. 温度依赖研究.
- 微磁模拟用于预测斯基米翁动力学.
主要成果:
- 系统1 (CoB/Ir/PtN重复) 显示了稳定的反铁磁介层交换合,高达N=7.
- 系统2 (合的CoB/Ir/Pt多层) 呈现出单独的迷宫般的磁域切换.
- 两种系统都表现出不同的温度依赖行为.
- 微磁模拟表明,与系统 2 相比,System 1 的 skyrmion Hall 角度被抑制,并且 skyrmion 速度是系统 2 的五倍.
结论:
- 设计的SAF系统具有独特的磁性和动态.
- 系统1在 skyrmion 速度方面表现出卓越的性能,这表明它对高速内存应用的潜力.
- 对SAF属性的进一步研究对于优化其在先进电子设备中的使用至关重要.
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