Si/Ge/C

Christian L Weindl1, Christian E Fajman2, Zhuijun Xu1

  • 1TUM School of Natural Sciences, Chair for Functional Materials, Physics Department, Technical University of Munich, James-Franck-Str. 1, Garching 85748, Germany.

概括

树突性铜微结构为Si/Ge/C薄膜提供了具有成本效益的阳极主机,提高了电池容量. 这种方法减少了形态退化,提高了阳极性能和寿命.

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