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纳米管铁电道连接处具有超高的道电阻比率

Jiu-Long Wang^1,2, Yi-Feng Zhao^1,2, Wen Xu^1,2

¹Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Department of Electronics, East China Normal University, Shanghai, 200241, China. wytong@ee.ecnu.edu.cn.

Materials horizons

|January 4, 2024

概括

研究人员开发了一种新的纳米管铁电道连接. 这种新机制实现了超高的道电阻 (TER) 比率,为先进的非挥发性内存设备铺平了道路.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

低维铁电道连接对于纳米级非易失性记忆至关重要.
现有的设备面临诸如低道电阻 (TER) 效应和复杂结构等局限性.

研究的目的:

为纳米管铁电道连接引入新的TER机制.
探索铁电纳米管在内存应用中的潜力.

主要方法:

使用了第一原则密度函数理论 (DFT) 计算.
采用了非平衡格林函数 (NEGF) 形式主义.
研究了在制铁电单层中内在极化和柔电极化的相互作用.

主要成果:

在纳米管铁电道连接处展示了一种新的TER机制.
使用α-In2Se3.3.实现超高的TER比率超过9.9 × 10^10%,使用α-In2Se3.3.
通过轴向电场展示了可调节的金属和绝缘状态.

结论:

铁电纳米管为高密度铁电微电设备提供了一个有希望的方法.
拟议的均结构提供了出色的开/关性能.
这项工作推动了下一代非易失性记忆技术的发展.

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