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ITO层对半极 (20-21) InGaN/GaN多重量子井与表面形态的空间光学分布的影响

Sheng Nie, Lingxiao Shuai, Maogao Gong

|January 4, 2024

概括

在半极 (20-21) InGaN/GaN发射器中添加一层氧化物 (ITO) 层会改变光发射模式. ITO沉积将矩形变为圆形的强度分布,提高了光提取效率.

科学领域:

半导体物理半导体物理
光电学是指光电子产品.
材料科学材料科学材料科学

背景情况:

半极和非极的III-化物异构结构表现出有纹理的表面,由于异极增长而具有微面.
表面形态显著影响排放的极化和空间强度分布.
在III-化物发射器中,氧化物 (ITO) 层对于增强电流注入和光提取至关重要.

研究的目的:

为了研究一层ITO层对半极 (20-21) InGaN/GaN多个量子井的空间强度分布的影响.
了解ITO沉积如何影响半极III-化物发射器中的光发射模式和光学异构性.

主要方法:

制造半极 (20-21) InGaN/GaN 多个量子井.
不同厚度的氧化物 (ITO) 层的沉积.
在ITO沉积之前和之后,表面排放的空间强度分布的表征.

主要成果:

ITO层沉积将排放强度分布从矩形形状转变为圆形形状的模式.
ITO层使光线沿[11-20]方向在平面的小角度发射光.
增加的ITO厚度减少了表面波动的影响,改善了小角度的光比例,整体整合强度略有下降.

结论:

ITO层有效地改变了半极III-化物发射器的光学异构和空间强度分布.
ITO沉积提供了一种控制光辐射特性以提高性能的方法.
这些发现支持开发高性能半极发射器,用于一般照明和背光的应用.

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