ReS2@ZnO,线

Xin-Yu Zheng1, Hong-Yu Li1, Bing-Yin Shi1

  • 1Key Laboratory of Photonic and electric Bandgap materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, Heilongjiang Province, China. wlyht@126.com.

概括

这项研究设计了一种硫化物 (ReS2) 和氧化 (ZnO) 异构结构,具有 Zn-S 键. 这种接口通过改善电荷转移和减少电子孔再组合来增强非线性光学特性.