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全溶液加工的高性能MoS薄膜晶体管与一个近二维矿氧化物介电器

Su-Yeon Joung¹, Haena Yim², Donghun Lee³

¹Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.

|January 5, 2024

概括

研究人员使用二硫化 (MoS2) 通道和氧化物介电材料开发了全溶液加工的范德瓦尔斯 (vdW) 薄膜晶体管 (TFT). 这种低温制造方法使高性能电子产品成为可能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

溶液处理的范德瓦尔斯 (vdW) 材料为大规模的低温电子产品提供了潜力.
之前的努力受到缺乏合适的介电材料和高温加工要求的限制.
实现完全解决方案处理的VDW电子产品需要克服这些制造挑战.

研究的目的:

为了展示全解决方案处理的VDW薄膜晶体管 (TFT).
为了利用二硫化 (MoS2) 作为通道材料和矿氧化物作为高允许度介电.
通过低温制造实现高性能电子设备.

主要方法:

大量晶体的电化学剥离,以制备MoS2和矿氧化物的合溶液.
用于TFT制造的半导体/介电异构结构的顺序组装.
所有的制造工艺都在250°C以下进行.

主要成果:

制造的 MoS2 TFT 实现了高流动性 (>10 cm2 V-1 s-1) 和超过 10^6.6 的开/关比.
高k介电器使得低电压运行 (约. 5V) 和低泄漏电流 (约. 10^-11 A). 这样就有了10^-11 A).
证明了高性能TFT的低温制造.

结论:

使用MoS2和矿氧化物进行全溶液加工的VDW TFT是可行的.
低温制造是可以实现的,使成本效益高且可扩展的薄膜电子产品成为可能.
这项工作为异构集成薄膜电子应用铺平了道路.

关键词:

在低温加工中进行低温加工.准2D矿氧化物介电器解决方案的过程解决方案的过程薄膜晶体管的使用方法两个维的材料是二维材料.

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