在结合的多连锁非共价有机框架中的多态结构,具有多样化的电阻切换行为
Shimin Chen1, Yan Ju1, Yisi Yang1
1Fujian Provincial Key Laboratory of Polymer Materials, College of Materials Science and Engineering, Fujian Normal University, Fuzhou, 350007, Fujian, China.
Nature communications
|January 5, 2024
概括
非共价有机框架表现出可切换的多态结构,用于电阻切换 (RS). 这项研究介绍了HOF-FJU-52,一种新的框架,展示了双重,可逆的电阻式随机访问记忆和写一次读多次行为.
科学领域:
- 材料科学 材料科学 材料科学
- 超分子化学 超分子化学
- 纳米技术纳米技术
背景情况:
- 非共价有机框架 (HOF) 具有固有的结构灵活性和可逆性.
- 这种灵活性允许在外部刺激下可切换的多态结构,显示了电阻切换 (RS) 应用的潜力.
- 然而,在RS内存设备中对HOF的探索仍然有限.
研究的目的:
- 报告一个新的0D+1D联聚链化非共价有机框架,HOF-FJU-52.
- 为了研究其多样化和可逆的电阻切换行为.
- 阐明其双重记忆功能背后的原子级机制.
主要方法:
- 合成和描述HOF-FJU-52.2. 的特征.
- 单晶器件的电气测试,以评估电阻开关特性.
- 温度依赖测量以观察记忆状态转换.
- 单晶X射线衍射分析以确定结构变化.
主要成果:
- 在室温下,HOF-FJU-52表现出极好的电阻随机存储器 (RRAM) 行为,与最先进的材料相美.
- 在200K以下,材料过渡到写一次读多次 (WORM) 记忆行为.
- 无论是RRAM和WORM行为都是可逆的,在单个设备上的温度变化.
- 原子层的结构分析显示了键二次体和 π-π 堆叠柱的双重灵活性,它们负责可逆结构转换.
结论:
- HOF-FJU-52展示了高性能,双重和可逆的电阻开关行为.
- 观察到的记忆效应归因于刺激诱导的可逆结构转变.
- 这项工作突出了非共价有机框架对于先进的内存设备应用的潜力.
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