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碳纳米管电子结构通过粒度边界缺陷的调制在Au上的RbI上{111})

Benjamin W McDowell1, Benjamen N Taber1, Jon M Mills1

  • 1Department of Chemistry and Biochemistry, Materials Science Institute, Oregon Center for Optical, Molecular, and Quantum Science, University of Oregon, 1253 University of Oregon, Eugene, Oregon 97403, United States.

The journal of physical chemistry letters
|January 8, 2024
PubMed
概括

局部电子状态出现在单壁碳纳米管 (SWCNTs) 中,原因是周围的RbI膜存在缺陷. 这些发现提供了对静电障碍对SWCNT设备性能影响的见解.

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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

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Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...