在无序的拓绝缘体中相位过渡,导电率波动和分布
Wenchao Liu1, Chaobo Luo1, Xiangyang Peng1
1Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, People's Republic of China.
概括
障碍影响到拓绝缘体 (TI). 这项研究表明,随着宽度的增加,斯坦丝带保持了其拓绝缘相,在混乱的情况下显示出不同的金属和绝缘相. 阶段过渡涉及出现和消失的传输通道.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
背景情况:
- 拓绝缘器 (TI) 具有保护的边缘状态,对于自旋和量子计算应用至关重要.
- 了解这些边缘状态对现实设备中的混乱的强度是必不可少的.
- 障碍也可以被利用来调整TI属性并探索新的阶段.
研究的目的:
- 在安德森障碍下,研究stanene中的相位和相位过渡,一个2D TI.
- 确定带宽对拓绝缘体相稳定性的影响.
- 使用导电率波动来描述不同的金属相及其对称性.
主要方法:
- 基于随机矩阵理论的统计方法.
- 结合安德森障碍的紧结合模型.
- 兰道尔-布蒂克尔形式主义用于计算现实的钢丝带的导电性.
- 对状态的局部密度和导电分布的分析.
主要成果:
- 计算出了一个显示拓绝缘体,金属和普通绝缘体相的相图.
- 带宽的增加显著提高了拓绝缘器相对混乱的稳定性.
- 金属相被分为单元和直角类,基于普遍导电率波动.
- 每个阶段都确定了电导率和局部密度状态模式的明确统计分布.
结论:
- 烯带表现出可调节的相 (TI,金属,绝缘) 取决于混乱和带宽度.
- 阶段过渡的特点是传输通道的出现和衰变.
- 这些发现提供了对二维拓绝缘体相位的实验识别和操纵的见解.
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