在铁电道连接处的高道电阻基于二维α-In2Se3/MoTe2范德瓦尔斯异构结构
Leitao Lei1, Yan-Hong Zhou1, Xiaohong Zheng2
1College of Science, East China Jiao Tong University, Nanchang 330013, China. yhzhou80@163.com.
Physical chemistry chemical physics : PCCP
|January 10, 2024
概括
我们在范德瓦尔斯异构结构 (vdWHs) 中展示了铁电极化控制的切换,用于新型铁电道连接 (FTJs). AA堆叠的α-In2Se3/MoTe2 vdWH表现出显著的道电阻,非常适合非挥发性内存.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 范德瓦尔斯异构结构 (vdWHs) 可实现铁电极化控制的带对齐.
- 铁电道结 (FTJ) 对电子设备来说是有前途的.
研究的目的:
- 设计和研究基于α-In2Se3铁电和MoTe2半导体的二维vdWH.
- 探索铁电极化控制的开关行为和FTJ中的潜在应用.
主要方法:
- 使用第一原则计算,研究了六种可能的vdWH配置.
- 分析包括工作功能,电荷再分配和状态的局部密度.
主要成果:
- 最稳定的AA堆叠VDWH在高 (AA-P↓) 和低 (AA-P↑) 导电状态之间表现出强大的铁电极化控制的切换.
- 一个设计的2D横向FTJ实现了高道电阻比为1.22 × 10^4%的N=2,随着铁电层厚度的增加而增加.
结论:
- AA堆叠的α-In2Se3/MoTe2 vdWH显示了高性能FTJ的巨大潜力.
- 这种vdWH适用于高密度非易失性存储器件的应用.
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