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阶段分离阻止了VBi2Te4的合成,通过分子光束代

Marieke Altena1, Thies Jansen1, Martina Tsvetanova1

  • 1MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands.

Nanomaterials (Basel, Switzerland)
|January 11, 2024
PubMed
概括

研究人员试图利用分子束表达式合成预测的内在磁性拓绝缘体VBi2Te4. 该研究发现,VBi2Te4不能稳定合成,而是形成Bi2Te3和VTe2.2的相分离.

关键词:
这就是VBi2Te4Te的意思.晶体的生长 晶体的生长磁性拓绝缘体是一种磁性拓绝缘体.分子光束的表达式是epitaxy.阶段分离的阶段分离.

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