在室温半导体探测器中,在没有先验知识的情况下识别缺陷,使用物理启发的机器学习模型.
Srutarshi Banerjee1, Miesher Rodrigues2, Manuel Ballester1
1Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL 60208, USA.
Sensors (Basel, Switzerland)
|January 11, 2024
概括
灵感来自物理学的机器学习模型现在可以识别室温半导体辐射探测器 (RTSD) 中未知的缺陷. 这些模型在体积上对缺陷进行了表征,改善了计算机断层扫描 (CT) 等应用的材料表征.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 机器学习 机器学习
背景情况:
- 室温半导体辐射探测器 (RTSD),如CdZnTe,对于计算机断层扫描 (CT) 和其他成像应用至关重要.
- 在RTSD中影响电子和孔传输的材料缺陷的特征至关重要,但劳动密集型,缺陷在设备之间差异很大.
- 现有的缺陷在表征之前往往是未知的,这对准确的材料评估构成了挑战.
研究的目的:
- 开发和演示一个灵感来自物理的机器学习 (PI-ML) 模型,能够识别RTSD中未知的材料缺陷.
- 从体积上描述RTSD缺陷,捕捉因制造和材料特性而产生的空间异质性.
- 评估PI-ML模型在整个检测器体积中确定特定缺陷的存在或不存在的能力.
主要方法:
- 开发一个PI-ML模型,旨在考虑RTSDs的所有潜在的实物缺陷.
- 对RTSD进行体积分离,以实现空间解决的缺陷分析.
- 应用PI-ML模型来识别和定位缺陷,包括电子和孔的捕获,脱落和重组地点.
主要成果:
- 该PI-ML模型成功地确定了在RTSD中存在或缺少特定的,以前未知的缺陷.
- 在检测器上以空间分辨的体积方式实现了缺陷识别.
- 该模型展示了捕捉RTSD材料固有的缺陷异质性的能力.
结论:
- PI-ML模型提供了一种强大的,数据驱动的方法来描述RTSDs中的复杂缺陷.
- 这种方法大大降低了与传统缺陷表征相关的劳动强度.
- 识别未知和空间变化的缺陷的能力提高了RTSDs的质量控制和性能预测,用于CT成像等关键应用.
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