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Updated: Jul 5, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

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在石墨烯/h-BN异构结构中观察到热导率的意外降低

Zhang Wu1, Rumeng Liu1, Ning Wei2

  • 1State Key Laboratory of Mechanics and Control for Aerospace Structures, Nanjing University of Aeronautics and Astronautics, 210016 Nanjing, P. R. China. liurumeng@nuaa.edu.cn.

Physical chemistry chemical physics : PCCP
|January 11, 2024
PubMed
概括

这项研究揭示了石墨烯和六角化 (h-BN) 异构结构的热导率低于纯 h-BN,这是由于增强的声子散射. 这些发现为控制纳米级材料的热传输提供了新的方法.

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Published on: October 12, 2019

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Fabrication of Three-Dimensional Graphene-Based Polyhedrons via Origami-Like Self-Folding14:52

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相关概念视频

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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