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在基于MnSe的范德瓦尔斯多铁道交叉点中,可调整多个非挥发性电阻状态

Xiao-Hui Guo¹, Lin Zhu¹, Zeng-Lin Cao¹

¹School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China. linzh@hust.edu.cn.

Physical chemistry chemical physics : PCCP

|January 12, 2024

概括

这项研究探讨了用于多状态记忆的二维范德瓦尔斯多铁路道连接. 研究人员发现,控制铁电屏障厚度和磁性对齐会产生具有高磁电阻和电阻的四个非挥发性电阻状态.

科学领域:

这就是Spintronics.
材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学

背景情况:

二维 (2D) 范德瓦尔斯 (vdW) 多铁道结 (MFTJs) 为先进的电子设备提供可调节的特性.
在MFTJ中,道磁电阻 (TMR) 和道电阻 (TER) 的共存对于非挥发性多态内存应用至关重要.

研究的目的:

为了研究Fe3GeTe2/MnSe/Fe3GeTe2 vdW MFTJs的自旋依赖的传输特性.
探索铁电屏障层数量和电极不对称性对TMR和TER效应的影响.
评估这些MFTJ在多态非挥发性记忆和旋转过器中的潜力.

主要方法:

第一原则计算与非平衡格林函数 (NEGF) 方法相结合.
系统地研究自旋依赖的运输特性.
基于铁电极化和铁磁对齐的电阻状态的分析.

主要成果:

基于MnSe的MFTJ通过控制MnSe偏振和Fe3GeTe2磁化,表现出四种非挥发性电阻状态.
最大TMR和TER值分别达到1.4 × 10^6%和4114%,Se层的增加.
不对称电极 (Cu/Fe3GeTe2) 进一步提高了TER从349%提高到618%.
在这些MFTJ中观察到一个完美的旋转过效应.

结论:

Fe3GeTe2/MnSe/Fe3GeTe2 vdW MFTJ显示出多态非挥发性内存应用的巨大潜力.
观察到的高TMR和TER效应,以及旋转过,突出了这些设备的实用性.
预计这项研究将刺激对可层控制的自旋电子设备的进一步实验研究.

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