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改善了雪崩无形的时间性能和光学量子效率,用于低剂量医学成像
Corey Orlik1, Sébastien Léveillé2, Salman M Arnab2
1Stony Brook University, Health Sciences Center L4-120, Department of Radiology, Stony Brook, New York, United States.
Journal of medical imaging (Bellingham, Wash.)
|January 15, 2024
概括
这项研究增强了高放大光导体 (HARP) 成像器,用于更好的医学成像. 一种新的阻塞孔层提高了时间性能,而化剂则提高了放射学和光学中的光学量子效率.
科学领域:
- 医学成像物理 医学成像物理
- 材料科学在医疗器械中的应用
- 半导体设备物理 半导体设备物理
背景情况:
- 使用薄膜晶体管阵列的活性矩阵平面成像仪 (AMFPI) 受到电子噪声的影响,在低剂量放射学和光学中降低图像质量.
- 使用无形 (a-Se) 的高放大光导体 (HARP) 技术,通过使用雪崩增强来克服间接AMFPI中的电子噪声,提供了一个潜在的解决方案.
研究的目的:
- 通过一种新型的复合孔阻塞层 (HBL) 来提高HARP成像器的时间性能.
- 通过 Tellurium (Te) 兴奋剂增加酸和 (CsI:Tl) 兴奋剂的光学量子效率 (OQE),用于增强成像.
主要方法:
- 制造两个HARP结构:复合HBL和Te-doped样本.
- 使用黑暗电流和光学灵敏度测量的雪崩增强和时间性能的表征.
- 对Te-doped样品的OQE和时间性能的评估,加上电荷传输建模和飞行时间测量,以评估孔的移动性和寿命.
主要成果:
- 复合HBL表现出极好的时间性能,在10mR相当的曝光下实现3%以下的幽灵化,以及16.0的雪崩增强.
- 受到Te-doped的样本显著增加了OQE从0.018到0.43的0.018到0.43为532nm光.
- 添加导致了2.1%的第一延迟,这归因于层内部的洞陷.
结论:
- 开发的复合HBL有效地提高了间接HARP成像器的时间性能.
- 胺兴奋剂提供了一种可行的方法来增加Csi:Tl闪器的OQE.
- 这些进步为间接HARP成像器的局限性提供了显著的改进,解决了时间响应和光检测效率.
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