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表面等离子体 lithography 的面具校正方法.

Le Ma, Libin Zhang, Jianfang He

    Applied optics
    |January 16, 2024
    PubMed
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    此摘要是机器生成的。

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    这项研究引入了表面等离子体光刻 (SPL) 面罩校正的新模型,显著减少了纳米制造中的临界维度 (CD) 错误. 改进的模型增强了制造应用程序的模式忠实性.

    科学领域:

    • 纳米技术和材料科学 材料科学
    • 光学工程是指光学工程.
    • 半导体制造业 半导体制造业

    背景情况:

    • 表面等离子体光刻 (SPL) 是一种先进的纳米制造技术.
    • 在SPL中实现高模式保真性需要精确的掩码校正,以最大限度地减少关键维度 (CD) 错误.
    • 现有的空中图像模型 (FDTD,RCWA) 不足以进行制造级别的口罩校正.

    研究的目的:

    • 开发一个全面的模型,用于SPL面罩校正.
    • 使用SPL. 在纳米制造中提高关键维度 (CD) 控制的准确性.
    • 建立基于模拟后开发图像 (ADI) 的面具校正规则表.

    主要方法:

    • 为SPL模拟开发了一种联合光学和电阻模型.
    • 对于光学建模,使用了有限差异时间域 (FDTD) 方法.
    • 模拟了130nm目标CD的测试模式,以生成ADI数据.
    • 规则表是从1D线和线末模式的模拟数据中得出的.

    主要成果:

    • 综合模型准确地模拟了SPL的开发后图像 (ADI).
    • 对于1D线和线末图案,成功建立了面具校正规则表.

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  • 经过校正后的模式显示了显著改善的临界维度 (CD) 错误性能.

    • 结论:

    • 拟议的综合模型增强了制造业的SPL模式忠实性.
    • 这种方法为减少纳米制造中的CD错误提供了可行的解决方案.
    • 开发的规则表为SPL面罩校正提供了一个实用的方法.