超灵活的单立体三维静态随机访问存储器
Jiaona Zhang1,2, Wanting Wang2, Jiahao Zhu2
1Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China.
ACS nano
|January 16, 2024
概括
研究人员开发了一种超灵活的静态随机访问存储器 (SRAM),使用了一种新的单立体3D设计. 这种紧,高密度的SRAM实现了先进的可穿戴电子产品的卓越灵活性和热稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米电子学纳米电子学
背景情况:
- 灵活的电子产品需要高性能内存组件,如静态随机访问内存 (SRAM).
- 现有的灵活的SRAM在实现小足迹,高灵活性和热稳定性方面面临挑战.
- 单立体三维 (M3D) 集成为紧和高密度的电子系统提供了潜力.
研究的目的:
- 为了实现一个超灵活的,高密度的六晶体管SRAM,提高性能.
- 研究一种新的M3D设计,集成垂直堆叠晶体管,以减少足迹和提高灵活性.
- 为了评估开发的柔性SRAM的热稳定性和机械强度.
主要方法:
- 采用单体三维 (M3D) 设计,集成n型氧化薄膜晶体管和p型碳纳米管晶体管.
- 使用共享门和排水电极来消除层间通道,减少细胞面积.
- 在恶劣的曲条件下 (500微米半径的6000个周期) 和高温 (333K) 下测试的设备性能.
主要成果:
- 与传统设计相比,实现了紧的SRAM单元足迹,将面积减少33%.
- 经过证明的特殊灵活性,可以承受6000个曲周期而不会降低性能.
- 在333 K处表现出极好的热稳定性和优越的电气性能,包括73.6%的正常化保持噪声率和3.15μW的静电功耗.
结论:
- 新的M3D设计允许实现具有高集成密度和强大的性能的超灵活SRAM.
- 这种进步克服了灵活SRAM的关键局限性,为先进的可穿戴系统铺平了道路.
- 开发的SRAM为下一代灵活的电子应用程序提供了有前途的解决方案,这些应用程序需要高可靠性和小型化.
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