在SMTe片中非挥发性同态价值转换
Shogo Hatayama1,2, Shunsuke Mori1, Yuta Saito2
1Department of Materials Science, Graduate School of Engineering, Tohoku University, 6-6-11, Aoba-yama, Aoba-ku, Sendai 980-8579, Japan.
ACS nano
|January 16, 2024
概括
telluride (SmTe) 薄膜表现出显著的电气和光学性能变化,没有结构变化,由一个价值过渡驱动. 这一发现为开发先进的光电子半导体材料提供了新的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 光电子设备需要具有可调节电气和光学性能的材料.
- 化 (SmTe) 是一种具有这种应用潜力的材料.
研究的目的:
- 调查SmTe薄膜中电阻和带隙显著变化的背后机制.
- 探索SmTe作为光电应用的半导体材料的潜力.
主要方法:
- 使用NaCl型结构的SmTe薄膜的制造和回火.
- 电阻力和光学带间隙的表征. 光学带间隙.
- 对归因于价值过渡的电子结构变化的分析.
主要成果:
- 作为沉积和化的SmTe薄膜显示电阻对比度超过10^5和带间隙约为1.45 eV,没有结构过渡.
- 在Sm^2+和Sm^3+之间的价值过渡 (VT) 被确定为与压力相关的属性变化的原因.
- 非挥发性低电阻状态是通过混合Sm等值状态来实现的.
结论:
- 通过应力诱导的价值转换,SmTe表现出可调节的特性,为光电子应用提供了一个新的机制.
- 和电脉冲可以调节Sm值状态,使设备能够工作.
- 这项研究为开发用于光电子的新半导体材料提供了有希望的方法.
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