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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

259
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
259
Biasing of P-N Junction01:16

Biasing of P-N Junction

539
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
539
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

352
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
352
Types Of Superconductors01:28

Types Of Superconductors

982
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
982
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

3.5K
Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
3.5K
P-N junction01:11

P-N junction

536
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
536

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相关实验视频

Updated: Jul 5, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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在MoTe2约瑟夫森结口中的不对称边缘超流.

Pingbo Chen1,2, Jinhua Wang2, Gongqi Wang2

  • 1Department of Physics, Harbin Institute of Technology Harbin 150001 China.

Nanoscale advances
|January 18, 2024
PubMed
概括

研究人员研究了/二化/ (Nb/MoTe2/Nb) 约瑟夫森结点中的超电流干扰. 结果显示,边缘状态主导超电流,表明MoTe2中潜在应用的更高阶拓性质.

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相关实验视频

Last Updated: Jul 5, 2025

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科学领域:

  • 凝聚物质物理学 凝聚物质物理学
  • 材料科学 材料科学 材料科学
  • 量子现象是一种量子现象.

背景情况:

  • 高阶拓绝缘体 (HOTI) 呈现出独特的边界状态.
  • 二化 (MoTe2) 是一种具有托管拓状态潜力的材料.

研究的目的:

  • 为了研究MoTe2.2中更高阶的拓性质.
  • 探索边缘状态在超电流传输中的作用.

主要方法:

  • /二甲/ (Nb/MoTe2/Nb) 平面约瑟夫森结的制造和表征.
  • 对超电流干扰模式的系统研究.
  • 边缘接触和未接触的结合点的比较分析.

主要成果:

  • 在Nb/MoTe2/Nb交叉点的超流传输中,MoTe2.2的边缘占据主导地位.
  • 观察到一个不对称的约瑟夫森效应与一个场调节的标志.
  • 在MoTe2.2中,有证据表明非微不足道的边缘状态,可能是链状态.

结论:

  • MoTe2 具有高阶拓绝缘体的特征.
  • 边缘状态在观察到的现象中起着至关重要的作用.
  • 基于MoTe2的约瑟夫森连接器在当前的整形应用中表现有前途.