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Updated: Jul 5, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Published on: October 13, 2017

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通过载体提取结构在InGaAs/InP单光子雪崩二极管阵列中的高交叉抑制

Yongsheng Tang1,2, Rui Wang1, Xiaohong Yang3,4

  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

Nature communications
|January 18, 2024
PubMed
概括

一个新的载体提取结构有效地减少了InGaAs/InP单光子雪崩二极管阵列中的交叉声. 这种方法引导光生成的孔,显著提高了3D成像和量子技术的性能.

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Indirect generation involves an...
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