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配合金属氧化物半导体技术的Cu-Doped SnO薄膜的组合工程

Ruohao Hong1, Penghui He1, Sen Zhang1

  • 1Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China.

Nano letters
|January 19, 2024
PubMed
概括

研究人员开发了一种新型的氧化 (Cu:SnO) 半导体,用于高性能互补电路. 这一突破使得单一材料上的p和n通道薄膜晶体管 (TFT) 能够用于先进的灵活电子产品.

关键词:
随着兴奋剂的使用这是一个SNO SnO.灵活的补充逻辑灵活的补充逻辑.金属氧化物半导体半导体

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...