双层LDPC代码与MLC NAND闪存的扰乱解码相结合
Lingjun Kong1, Haiyang Liu2, Wentao Hou3
1Faculty of Network and Telecommunication Engineering, Jinling Institute of Technology, Nanjing 211169, China.
Entropy (Basel, Switzerland)
|January 22, 2024
概括
这项研究介绍了一种双层低密度平价检查 (LDPC) 编码方案,用于多层细胞 (MLC) NAND闪存. 这种新的方法增强了错误校正,将内存寿命延长到10,000个程序和删除周期.
科学领域:
- * 数字存储技术的使用.
- * 错误纠正编码的编码
- * 半导体存储器设备的使用
背景情况:
- *多级别单元 (MLC) NAND闪存面临数据完整性和有限寿命的挑战.
- * 传统的编码方案难以充分利用MLC NAND闪存的不对称通道特性.
- * 提高错误纠正对于提高闪存的可靠性和耐用性至关重要.
研究的目的:
- *为MLC NAND闪存提供一种新的编码方案.
- * 为了利用MLC闪光通道的不对称性质,以改善错误纠正.
- *为了延长MLC NAND闪存的使用寿命.
主要方法:
- * 开发一个双层低密度平价检查 (LDPC) 代码结构.
- *利用MLC NAND闪存通道不对称性,将平价位存储在页面的底部.
- *将基于遗传算法 (GA) 的扰动过程集成到解码算法中,以纠正无法纠正的读取序列.
主要成果:
- * 拟议的双层LDPC编码方案有效利用通道不对称性.
- *基于GA的扰动解码显示出效率,特别是在低程序和删除 (P/E) 循环区域.
- *模拟结果表明,MLC NAND闪存的潜在寿命可以延长到10,000个P/E周期.
- * 与单个LDPC方案相比,该方案在性能和复杂性之间取得了更好的平衡.
结论:
- *双层LDPC编码方案为提高MLC NAND闪存的可靠性提供了一个实际的解决方案.
- * 集成基于GA的扰动解码显著提高了错误纠正能力.
- * 拟议的方案非常适合在MLC NAND闪存中的实际应用,平衡性能和复杂性.
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