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Updated: Jul 5, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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Published on: November 28, 2017

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范德瓦尔斯MoS2与GaN的异质连接的接口属性

Salvatore Ethan Panasci1, Ioannis Deretzis1, Emanuela Schilirò1

  • 1National Research Council-Institute for Microelectronics and Microsystems (CNR-IMM), Z.I. Strada VIII 5, 95121 Catania, Italy.

Nanomaterials (Basel, Switzerland)
|January 22, 2024
PubMed
概括

这项研究探讨了用于先进电子的化 (GaN) 上的二硫化 (MoS2). 结果揭示了范德瓦尔斯接口和n型兴奋剂,对于设备优化至关重要.

关键词:
在 DFT 方面,它是最重要的.在 GaN GaN 中.在MoS2中,MoS2就是MoS2.接口 接口 接口 接口 接口vdW 异构结构的异构结构宽带间隙宽带宽带间隙

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