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无电容单晶体管动态随机访问存储器,具有新的机制:自动刷新.
Sang Ho Lee1, Jin Park1, Young Jun Yoon2
1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
Nanomaterials (Basel, Switzerland)
|January 22, 2024
概括
这项研究引入了用于动态随机存储器 (1T-DRAM) 的无连接场效应晶体管 (JLFET) 的新型自刷新机制. 这一创新提高了先进的存储器设备中的数据保留和可靠性.
科学领域:
- 固态物理 固态物理
- 半导体设备物理学 半导体设备物理
- 材料科学 是一种材料科学.
背景情况:
- 动态随机访问存储器 (DRAM) 对计算至关重要,但存在数据保留问题.
- 传统的DRAM需要不断的电源来更新存储的数据,从而导致能源消耗.
- 无连接场效应晶体管 (JLFET) 为缩放式内存设备提供了潜力.
研究的目的:
- 提出和研究一种使用JLFET的基于在绝缘体 (SOI) 的1T-DRAM中的新型自刷新机制.
- 证明冲击电离的有效性,用于连续生成孔,防止重组.
- 评估性能指标,包括传感边际,保留时间和拟议设备的可靠性.
主要方法:
- 在持有偏差期间实施自刷新机制,利用冲击电离.
- 在在绝缘体 (SOI) 基板上制造无连接场效应晶体管 (JLFET).
- 在不同温度 (300K和358K) 的传感边缘的实验性表征.
- 性能保留时间和细胞干扰的评估.
主要成果:
- 拟议的自刷新机制在300K和358K分别实现了15.4和12.7μA/μm的传感边缘.
- 证明了出色的性能保留时间超过500毫秒,独立于单门1T-DRAM的温度.
- 细胞干扰分析和电压优化证实了基于JLFET的1T-DRAM的细胞内可靠性.
- 该设备的能量消耗和写入速度都比较高.
结论:
- 这种新的自刷新机制有效地提高了基于JLFET的1T-DRAM的可靠性和性能.
- 基于冲击电离的方法为克服DRAM中数据保留限制提供了一个有希望的解决方案.
- 这项技术为节能和高速内存应用提供了巨大的潜力.
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