访,:.

Sang Ho Lee1, Jin Park1, Young Jun Yoon2

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

PubMed
概括

这项研究引入了用于动态随机存储器 (1T-DRAM) 的无连接场效应晶体管 (JLFET) 的新型自刷新机制. 这一创新提高了先进的存储器设备中的数据保留和可靠性.

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