垂直六角化记忆体中的量子导电与石墨烯边缘接触的量子导电
Jing Xie1, Md Naim Patoary1, Md Ashiqur Rahman Laskar1
1Arizona State University, School of Electrical, Computer, and Energy Engineering, Tempe Arizona 85281, United States.
Nano letters
|January 22, 2024
概括
我们开发了使用石墨烯接触器进行原子规模计算的垂直六角化 (h-BN) 记忆体. 这些设备提供超低功耗,并使单导电纳米丝在2D材料的行为研究.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 电子 电子 电子 电子 电子 电子 电子
背景情况:
- 二维材料 (2DMs) 对于推进神经形态和内存计算 (IMC) 是至关重要的.
- 电阻切换内存设备是这些下一代计算范式的关键组件.
- 原子级小型化对于提高设备性能和可扩展性至关重要.
研究的目的:
- 介绍和描述垂直六角化 (h-BN) 记忆体与石墨烯边缘接触.
- 为了实现三维 (3D) 集成,实现终极设备可扩展性.
- 研究2DMs中单导电纳米纤维 (CNF) 的基本电阻切换行为.
主要方法:
- 使用石墨烯边缘接触器制造垂直的h-BN记忆器.
- 原子薄 (∼0.3 nm) 石墨烯的整合,以减少泄漏和单个CNF的隔离.
- 在单个CNF中对编程特征和导电性步骤的实验研究.
- 对电阻切换属性的分析,包括量子导电的保留.
主要成果:
- 由于在超小活性区域中孤立的CNF,证明了超低的功耗.
- 通过原子薄的石墨烯边缘接触实现了微不足道的泄漏.
- 观察到导电性的一致单个量子步骤,归因于原子受约束的纳米纤维行为.
- 提供了实验证据,证明了h-BN记忆器中量子导电性的优越保留.
结论:
- 带有石墨烯边缘接触的垂直h-BN记忆器可以实现原子级小型化和3D集成.
- 独特的设备结构促进了研究2DMs的基本单一CNF行为.
- 这些memristor表现出稳定和强大的电阻切换内存应用程序的有希望的特性.
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