在2D铁磁铁Fe3GeTe2中基于域墙数转换的电流可控制和可逆的多电阻状态
Chendi Yang1, Yalei Huang2, Ke Pei1
1Laboratory of Advanced Materials, Shanghai Key Lab of Molecular Catalysis and Innovative Materials, Academy for Engineering & Technology, Fudan University, Shanghai, 200438, China.
Advanced materials (Deerfield Beach, Fla.)
|January 22, 2024
概括
研究人员开发了一种全新的全电气方法来控制2D铁磁体中的多态切换,这对于神经形态计算至关重要. 这种Fe3GeTe2突触模仿大脑功能,在手写识别方面达到高精度.
科学领域:
- 这就是Spintronics.
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
背景情况:
- 控制2D铁磁体中的多态切换对于先进的电子设备,如赛道记忆和神经形态计算至关重要.
- 开发具有快速多态切换和重置能力的全电纳米设备是一个重大挑战.
研究的目的:
- 建立一个可控制的电阻状态切换在2D铁磁铁的全电流策略.
- 用Fe3GeTe2.2模拟生物突触的强化和抑制过程.
- 为了证明2D铁磁铁在神经形态自旋电子学中的潜力.
主要方法:
- 采用全电流策略,通过调节Fe3GeTe2.2中的域壁数来实现可控制的电阻状态切换.
- 在现场使用洛伦茨传输电子显微镜观察域壁数量减少和电阻减少之间的相关性.
- 进行了设备模拟,以了解导致磁状态逆转的快速热去磁化.
主要成果:
- 在降低域壁数量和Fe3GeTe2.2中降低的电阻之间发现了强烈的相关性.
- 一个单一的高振幅电流脉冲通过快速的热去磁化,立即将磁状态逆转为多域壁状态.
- 一个利用Fe3GeTe2突触的神经形态计算系统在手写图像识别中实现了91%的准确性.
结论:
- 该研究提出了一种前所未有的全电流策略,用于2D铁磁体中的多态切换.
- Fe3GeTe2显示出作为先进的神经形态旋转器件材料的潜力.
- 开发出的人工突触显示出大脑启发的计算应用的前景.
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