在喷射缓冲层上的 (11-22) AlN
Xuejun Yan1, Maosong Sun1,2, Jianli Ji1
1Research Center for Optoelectronics Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
Materials (Basel, Switzerland)
|January 23, 2024
概括
高品质的化 (AlN) 涂层使用化蒸汽相表 (HVPE) 在化磁铁喷射的AlN缓冲器上生长. 通过在1500°C左右的化实现了最佳的AlN上层质量.
科学领域:
- 材料科学 材料科学 材料科学
- 晶体的成长 晶体的成长
- 半导体技术 半导体技术
背景情况:
- 化 (AlN) 是光电子设备的关键材料.
- 在蓝宝石基板上种植高质量的AlN皮层存在挑战.
- 磁铁喷射 (MS) AlN缓冲器用于提高层质量.
研究的目的:
- 为了研究热温度对MS AlN缓冲器和随后的HVPE培养的AlN脱皮层的影响.
- 为了确定最佳的回火条件,以提高晶体质量.
- 分析AlN脱皮层和缓冲层的异构性.
主要方法:
- 在MS AlN缓冲器上通过1450°C的化物蒸气相表层 (HVPE) 在m平面蓝宝石上生长的AlN层.
- 在1400°C至1600°C的温度范围内,MS缓冲器的回火.
- 使用X射线衍射,原子力显微镜,扫描电子显微镜和拉曼光谱法进行表征.
主要成果:
- 与MS缓冲器相比,HVPE重新生长的AlN皮层显示出明显改善的晶体质量.
- 缓冲器和皮层的晶体质量最初随着热温度的提高而改善,然后下降,可能是由于缓冲器分解.
- 最佳的AlN上层质量是在1500°C左右的火温度下实现的,并且降低了异性质.
结论:
- 化温度极大地影响了在MS缓冲器上培养的AlN的晶体质量和异性质.
- 大约1500°C的火温度产生了最好的AlN上层质量.
- 了解回火效应是优化先进应用的AlN表的关键.
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