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对Pt/SiC和Cr/SiC的彻底广泛温度范围分析肖特基接触不均性

Razvan Pascu^1,2, Gheorghe Pristavu², Dan-Theodor Oneata²

¹National Institute for Research and Development in Microtechnologies-IMT Bucharest, 126A, Erou Iancu Nicolae Street, 077190 Bucharest, Romania.

Materials (Basel, Switzerland)

|January 23, 2024

概括

这项研究分析了碳化上金和Schottky接触器的不均性. 研究结果显示,每个接触器都充当了四个并行二极管,它们的行为因温度和偏差而变化.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
半导体物理半导体物理

背景情况:

对于半导体设备来说,Schottky接口至关重要.
碳化 (SiC) 是高功率电子产品的关键材料.
了解接触不均性对于设备性能至关重要.

研究的目的:

为了量化和的不均性,Schottky接触在碳化上.
为了研究这些接触器的取决于温度的电气特性.
为了模拟这些非统一的接触者的行为.

主要方法:

在广泛的温度范围内 (60-500 K) 进行电气表征.
微结构分析以确定表面的不均性.
在参数提取中应用不均质模型.
对于前置电流-电压 (I-V) 曲线的P-二极管建模.

主要成果:

实验数据显示了接触表面的显著不均性.
使用不同的模型提取的参数显示了温度依赖的相关性.
前方I-V特性使用四个平行理想二极管模型准确地装配.
这些平行二极管的影响因温度和应用偏差而异.

结论:

在SiC上,每个Schottky接触都表现为一个由四个平行二极管组成的复杂系统.
接触者的有效行为强烈依赖于工作温度和偏差.
存在可识别的可操作域,其中设备性能是合适的,基于温度和偏差条件.

关键词:

斯科特基联系方式不统一性的不统一性 p-二极管模型的模型碳化是碳化的重要组成部分.

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