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Updated: Jul 23, 2026

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在芯片上循环极化循环环形天线,在Q/V频段中使用4H-SiC和GaAs基质

Rawad Asfour1, Salam K Khamas1, Edward A Ball1

  • 1Department of Electronic & Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK.

Sensors (Basel, Switzerland)
|January 23, 2024
PubMed
概括

这项研究展示了使用4H-SiC基板用于Q/V频段应用的高性能芯片上循环极化 (CP) 天线. 这些天线实现了出色的阻抗匹配,低轴比和高辐射效率,为先进的无线系统铺平了道路.

关键词:
4H-SiC 4H-SiC 是一个在 GaAsAs 的情况下.阵列天线 阵列天线循环的极化是循环的极化.环形天线 环形天线毫米波是一种毫米波.在芯片上的天线.

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