在Cu基板上组装的GaNLED和Si芯片的局部应变评估Micro-Raman
Enrico Brugnolotto1, Claudia Mezzalira1, Fosca Conti1
1Department of Chemical Science, University of Padova, Via Marzolo 1, 35131 Padova, Italy.
Micromachines
|January 23, 2024
概括
对于LED模块的半导体材料,应变是由于芯片,和基板之间的不同热膨胀引起的. 这种热力学应力会影响设备的性能和可靠性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 光电学是指光电子产品.
背景情况:
- 集成电路需要仔细的材料选择和加工,以管理残余应变.
- 热力学应变显著影响电子设备的性能,寿命和可靠性.
- 了解半导体材料的应变对于优化制造工艺至关重要.
研究的目的:
- 为了分析LED模块内的化 (GaN) 层中的热力学局部应变.
- 为了研究温度对基于GaN的照明设备的应变分布的影响.
- 在LED模块组装过程中识别压力的主要来源.
主要方法:
- 拉曼光谱法被用来绘制GaN层中的应变图.
- 样本包括在蓝宝石基板上的GaN和在铜基板上用eutecticAuSn接的Si芯片.
- 测量是在-50°C至180°C的温度范围内进行的.
主要成果:
- 芯片,和基板材料之间的热膨胀系数的差异是GaN层中应变的主要原因.
- 这些热膨胀不匹配导致芯片曲,导致GaN的应变.
- GaN层在芯片的中心呈现压力应变,在芯片的边缘呈现拉伸应变.
结论:
- 热膨胀系数不匹配是LED模块内GaN应变的一个关键因素.
- 应变分布与组装材料和温度变化直接相关.
- 管理热力学应变对于提高LED照明应用的可靠性至关重要.
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