对AlGaN/GaN高电子移动性晶体管的不同冷却方案的比较
Yunqian Song1,2,3,4, Chuan Chen1,3, Qidong Wang1,3
1Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.
Micromachines
|January 23, 2024
概括
制冷AlGaN/GaN HEMT是非常重要的. 近芯片冷却 (NC-cool) 和芯片嵌入式冷却 (CE-cool) 提供了类似的性能,NC-cool在临界微通道厚度以下的性能优于CE-cool.
科学领域:
- 材料科学 材料科学 材料科学
- 热力工程是热力工程中的一个.
- 半导体设备 半导体设备
背景情况:
- 有效的热管理对于化/化 (AlGaN/GaN) 高电子流动性晶体管 (HEMT) 的性能和可靠性至关重要.
- 存在各种不同的冷却方案,每个都有独特的优势和限制,影响热阻.
研究的目的:
- 为了比较三个不同的方案的冷却性能:远程冷却 (R-cool),近芯片冷却 (NC-cool) 和芯片嵌入式冷却 (CE-cool) 对于AlGaN/GaN HEMT.
- 研究几何参数和操作条件对这些冷却方法的热阻的影响.
主要方法:
- 对R-cool,NC-cool和CE-cool进行比较分析.
- 基于微通道基厚 (h),热源间距 (P),基板导热率 (λ) 和对流传热转移系数 (h) 的热阻变化的研究.
主要成果:
- 在NC-cool和CE-cool中,可比的热电阻是相似的.
- 降低微通道底厚 (h) 显著增加了CE冷却的热电阻,使NC冷却在临界厚度以下优越.
- 临界厚度受热源间距 (P),对流传热传递系数 (h) 和基板导热率 (λ) 的影响.
- 增加P或λ可改善所有三种方案的热电阻.
- 增加h显著降低NC-cool和CE-cool的热电阻,对R-cool的影响最小.
结论:
- 在NC-cool和CE-cool之间做出选择,取决于微通道底层厚度,热源间距和基板特性.
- 优化几何参数和材料特性对于AlGaN/GaN HEMT中有效的热管理至关重要.
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