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Updated: Jul 5, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

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为高功率运行优化AlGaN/GaN高电子流动性晶体管的网关-头部-顶部/底部长度,具有高功率运行的网关内置结构:模拟研究研究

Woo-Seok Kang1, Jun-Hyeok Choi1, Dohyung Kim1

  • 1Division of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul 04620, Republic of Korea.

Micromachines
|January 23, 2024
PubMed
概括

这项研究优化了AlGaN/GaN HEMT的高功率,通过延长门头,将故障电压提高了52%. 随后的门进一步提高了性能,将故障电压提高了35%,同时保持了射频特征.

关键词:
断裂电压的故障电压是什么的化是的化物.门头 - - 门头 - - 门头门回收的门回收.高电子移动性晶体管高电子移动性的晶体管.

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