相关实验视频
Updated: Jul 5, 2025

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Implementation of a Reference Interferometer for Nanodetection
Published on: April 26, 2014
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一个高精度带隙参考与切割器稳定和V曲线补偿技术
Enming Chen1, Thomas Wu1, Jianhai Yu2
1School of Computer, Electronics and Information, Guangxi University, Nanning 530004, China.
Micromachines
|January 23, 2024
概括
为MEMS传感器开发了一种新的高精度,低噪音带隙参考电路. 它显著减少噪音和温度漂移,提高传感器的准确性和性能.
科学领域:
- 电气工程 电气工程
- 传感器技术 传感器技术
- 模拟电路设计 模拟电路设计
背景情况:
- MEMS 传感器产生弱,低频信号,需要高精度的接口电路.
- 传统的放大器引入噪声和偏移,降低带隙参考精度.
- 对于MEMS接口电路中的噪声,偏移和温度系数的严格要求.
研究的目的:
- 为MEMS传感器接口电路提出一个高精度,低噪音的带隙参考.
- 为了提高MEMS传感器信号调节的准确性和可靠性.
- 解决传统放大器在低频低噪声应用中的局限性.
主要方法:
- 实施了一种新的操作放大器,利用机稳定来最大限度地减少偏移和低频噪声.
- 采用V曲线补偿电路进行二级曲率补偿.
- 使用0.18微米CMOS工艺设计和制造了电路.
主要成果:
- 在-40-140°C的低温系数达到2.31 ppm/°C.
- 测量的输出电压噪声为616nV/sqrt{Hz) @1Hz.
- 获得了73 dB@10 kHz的电源排斥比率和0.33 mV/V的线性调整率.
结论:
- 拟议的带隙参考符合MEMS传感器接口电路的严格要求.
- 该电路在噪声,温度稳定性和功率效率方面表现出色.
- 该设计为提高MEMS传感器准确性和性能提供了可行的解决方案.
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