关于P型GaN门高电子移动性晶体管主门特征的审查
Zhongxu Wang1, Jiao Nan1, Zhiwen Tian2
1Key Laboratory for Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China.
Micromachines
|January 23, 2024
概括
化 (GaN) 功率晶体管显示出对高功率电子产品的承诺. 这项研究通过优化结构来提高值和门故障电压以提高可靠性来提高它们的性能.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 电力电子 电力电子 电力电子
背景情况:
- 化 (GaN) 横向高电子移动性晶体管 (HEMT) 是具有优异的高电压,低电阻和高频特性的宽带间隙半导体.
- pGaN 门 HEMT 提供正常关闭的操作和强大的门可靠性,使它们适用于高压,高功率的应用.
- 与 (Si) 和碳化 (SiC) 功率 MOSFET 相比,当前的 pGaN HEMT 具有较低的值和断电压.
研究的目的:
- 增强pGaN HEMT的主要特征,特别关注改善值和门故障电压.
- 介绍和讨论各种方法来实现这些改进在p型GaN门HEMT.
- 通过增强的门特性加速GaN功率电子的发展.
主要方法:
- 对pGaN HEMTs的表轴层和设备结构的优化.
- 实施战略,包括对pGaN上限的顶层优化.
- 提高孔度,利用低功能的门电极,并应用MIS类型的pGaN门.
主要成果:
- 展示了各种方法来显著提高pGaN HEMT的值电压.
- 通过结构和材料修改,通过pGaN HEMT的网关故障电压实现了增强.
- 介绍了关于 p 型 GaN 门 HEMT 主门特征增强的全面讨论.
结论:
- 优化的设备结构和材料策略有效地改善了pGaN HEMT的关键门特性.
- 提出的方法提供了可行的解决方案,以克服当前pGaN门技术的局限性.
- 在pGaN HEMT方面的进步对于GaN功率电子的持续进步和更广泛的采用至关重要.
相关概念视频
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01:16MOSFET
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