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Updated: Jul 5, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

一个10-20 GHz的6-比特高精度数字步骤减光器,在0.15μm的GaAs p-HEMT技术中具有低插入损失

Ding He^1,2, Zhentao Yu³, Jie Chen³

¹Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100190, China.

|January 23, 2024

概括

这项研究引入了用于阶段阵列系统的超宽带6位数字阶段开关型减弱器 (STA). 这种新的设计实现了高精度和紧性,这对于现代光束成形电路至关重要.

科学领域:

电气工程电气工程
微波工程微波工程
半导体设备半导体设备

背景情况:

阶段阵列系统在束形电路中需要高精度和紧性.
侧叶水平和制造成本是受到电路设计影响的关键参数.
低相位误差对于有效的宽带相位阵列运行至关重要.

研究的目的:

为现代宽带阶段阵列系统提供超宽带6位数字阶段开关型减弱器 (STA).
为了实现高精度的振幅和相位控制,同时保持紧性.
为了减少插入损失并改善级联系统的返回损失.

主要方法:

开发一款超宽带6位数字步骤切换型减弱器 (STA).
实现电容/诱导补偿网络和简化的T结构.
整合了芯片上的水平转移电路,以简化控制.
采用回报损失优先级策略,以减轻阻抗不匹配的影响.

主要成果:

使用0.15微米GaAs pHEMT技术,演示一个宽带6位STA,核心面积为0.5mm×1.8mm.
实现了超宽带操作,幅度调节范围为31.5dB,调节步骤为0.5dB.
在所有64个状态中显示的插入损失为4-5.3dB (参考状态) 和返回损失优于15dB.
实现的平方根平均 (RMS) 幅度和相位误差分别低于0.2 dB和2°,从10到20 GHz.

结论:

拟议的6位数字阶段交换型减弱器 (STA) 符合现代宽带阶段阵列系统的严格要求.
与传统方法相比,新的设计在准确性和紧性方面取得了显著的改进.
这项技术使成本效益高的制造和在梁成型应用中提高性能成为可能.

关键词:

在 GaAsAs 的情况下.数字步骤减光器的数字减光器低插入损失的低插入损失.经过修改的简化T型车型.阶段错误补偿阶段错误补偿

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