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Updated: Jul 5, 2025

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基于InGaN的红色垂直腔表面发射激光器的设计和模拟.

Tai-Cheng Yu1, Wei-Ta Huang1,2, Hsiang-Chen Wang1

  • 1Department of Photonics, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.

Micromachines
|January 23, 2024
PubMed
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这项研究介绍了一种新的红色垂直腔表面发射激光 (VCSEL),使用纳米孔散布布拉格反射器和高指数对比格. 模拟指导这些半导体激光器的高极化和效率的设计.

科学领域:

  • 光电学是指光电子产品.
  • 材料科学 材料科学 材料科学
  • 半导体物理 半导体物理

背景情况:

  • 垂直腔表面发射激光器 (VCSEL) 对于光通信和传感至关重要.
  • 在发射红色的VCSEL中实现高极化和高效率仍然是一个挑战.
  • 需要采用先进材料和结构的新设计来克服当前的局限性.

研究的目的:

  • 提出并模拟一个高度偏振的红色VCSEL (612 nm).
  • 为了研究纳米孔隙 (NP) GaN 分布布拉格反射器 (DBR) 和TiO2高指数对比格 (HCG) 对设备性能的影响.
  • 为高效和明亮的红色VCSEL提供设计指南.

主要方法:

  • 对612nm的VCSEL进行了光电子模拟.
  • 系统地分析了NP DBR和HCG几何对光学反射率的影响.
  • 对于有限大小的HCG,研究了空洞模式波长和光学值增益.

主要成果:

  • 超过17对NP GaN DBR具有60%空气空隙,实现了>99.7%的反射率.
  • 确定了最佳的HCG尺寸 (周期,宽度与周期,高度与周期的比率).
  • 在横向模式之间获得了很大的值增强差异 (67.4-74%),表明极化很高.
关键词:
在GaNN中获得.具有高指数的对比格子.纳米多孔的DBR是一种DBR阶段性的MQW.垂直空洞表面发射激光的激光器.

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结论:

  • 拟议的VCSEL设计与分层的InGaN多个量子井,NP DBR和HCG显示了高极化潜力.
  • 模拟结果为开发高效和明亮红色VCSEL提供了路线图.
  • 设计考虑对于未来的光电子设备制造至关重要.